maximum ratings: (t c =25c) symbol 2N6383 2n6384 2n6385 units collector-base voltage v cbo 40 60 80 v collector-emitter voltage v cex 40 60 80 v collector-emitter voltage v ceo 40 60 80 v emitter-base voltage v ebo 5.0 v collector current i c 10 a peak collector current i cm 15 a base current i b 250 ma power dissipation p d 100 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 1.75 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cev v cev =rated v ceo , v be(off) =1.5v 300 a i cev v cev =rated v ceo , v be(off) =1.5v, t c =150 c 3.0 ma i ceo v ce =rated v ceo 1.0 ma i ebo v eb =5.0v 10 ma bv ceo i c =200ma (2N6383) 40 v bv ceo i c =200ma (2n6384) 60 v bv ceo i c =200ma (2n6385) 80 v bv cer i c =200ma, r be =100 (2N6383) 40 v bv cer i c =200ma, r be =100 (2n6384) 60 v bv cer i c =200ma, r be =100 (2n6385) 80 v bv cev i c =200ma, v be(off) =1.5v (2N6383) 40 v bv cev i c =200ma, v be(off) =1.5v (2n6384) 60 v bv cev i c =200ma, v be(off) =1.5v (2n6385) 80 v 2N6383 2n6384 2n6385 npn silicon power darlington transistor to-3 case central semiconductor corp. tm r1 (28-august 2008) description: the central semiconductor 2n3683 series types are npn silicon power darlington transistors designed for power amplifier applications. marking: full part number
central semiconductor corp. tm to-3 case - mechanical outline 2N6383 2n6384 2n6385 npn silicon power darlington transistor r1 (28-august 2008) marking: full part number lead code: 1) base 2) emitter c) collector electrical characteristics - continued: (t c =25c unless otherwise noted) symbol test conditions min max units v ce(sat) i c =5.0a, i b =10ma 2.0 v v ce(sat) i c =10a, i b =100ma 3.0 v v be(on) v ce =3.0v, i c =5.0a 2.8 v v be(on) v ce =3.0v, i c =10a 4.5 v h fe v ce =3.0v, i c =5.0a 1k 20k h fe v ce =3.0v, i c =10a 100 v f i f =10a 4.0 v c ob v cb =10v, i e =0, f=1.0mhz 200 pf |h he| v ce =5.0v, i c =1.0a, f=1.0mhz 20 h he v ce =5.0v, i c =1.0a, f=1.0khz 1k r2
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